Closed Loop Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 3 to14 ppm/°C, -40°C to + 105°C, ?Reference access, Primary integrated conductors?, 100 % fully compatible with CASR xx-NP series
LESR 25-NP/SP1
25 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 4 ppm/°C, -40°C to + 105°C, ?Reference access, Only 4 integrated primary conductors for differential measurement with 2 x 2 turns
- シリーズ
-
LESR
- 測定
-
電流センサ
- 公稱値
-
25 A
- 測定範囲
-
85 A
- 二次公稱信號
-
電圧
- 二次公稱信號値
- 瞬時 2.5 +/- 0.625 V
- 一次信號
-
AC + DC
- 電源電圧
-
外部DCユニポーラ
- 電源電圧範囲
- 5 - 5 V
- 精度
- 0.7 %
- 動作溫度
- -40 °C / 105 °C
- 技術
-
クローズドループ?ホール効果
- 取り付け
-
基板
- アプリケーション
-
ドライブ電源再生可能エネルギー溶接
相対情報
同じシリーズの製品
LESR 15-NP/SP1
15 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 6 ppm/°C, -40°C to + 105°C, ?Reference access, Only 2 integrated primary conductors for differential measurement with 1 turn
LESR 50-NP/SP1
50 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 3 ppm/°C, -40°C to + 105°C, ?Reference access, Only 4 integrated primary conductors for differential measurement with 2 x 2 turns
LESR 6-NP/SP1
6 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 14 ppm/°C, -40°C to + 105°C, ?Reference access, Only 2 integrated primary conductors for differential measurement with 1 turn
LESR 50-NP
50 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 3 ppm/°C, -40°C to + 105°C, ?Reference access, Primary integrated conductors?, 100 % fully compatible with CASR 50-NP
LESR 15-NP
15 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 6 ppm/°C, -40°C to + 105°C, ?Reference access, Primary integrated conductors?, 100 % fully compatible with CASR 15-NP
LESR 25-NP
25 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 4 ppm/°C, -40°C to + 105°C, ?Reference access, Primary integrated conductors?, 100 % fully compatible with CASR 25-NP
LESR 6-NP
6 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 14 ppm/°C, -40°C to + 105°C, ?Reference access, Primary integrated conductors?, 100 % fully compatible with CASR 6-NP